Cyclic Voltammetry and Impedance Measurements of Graphene Oxide Thin Films Dip-Coated on n-Type and p-Type Silicon

Despite the increasing interest in graphene, a less studied aspect is enhancement of silicon (Si) performances due to interaction with graphene-based materials. In this study, cyclic voltammetry and electric impedance measurements are performed on graphene oxide (GO) dip-coated n-type p-type Si samples. The electrical properties GO samples dramatically enhanced: conductivity photocurrent meaningfully increase comparison bare Si. Such findings could be used wide variety optoelectronic applications, improving future applicability semiconductor industry.